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may 2011 doc id 15427 rev 4 1/22 22 stb21n65m5, stf21n65m5 STI21N65M5, stp21n65m5, stw21n65m5 n-channel 650 v, 0.150 ? , 17 a mdmesh? v power mosfet d2pak, to-220fp, to-220, i2pak, to-247 features worldwide best r ds(on) * area higher v dss rating high dv/dt capability excellent switching performance 100% avalanche tested application switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroe lectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d p w stb21n65m5 710 v < 0.179 ? 17 a 125 w stf21n65m5 17 a (1) 1. limited only by maximum temperature allowed 30 w STI21N65M5 17 a 125 w stp21n65m5 stw21n65m5 1 2 3 d2pak i2pak 1 2 3 to-220 1 2 3 to-220fp to-247 1 3 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging stb21n65m5 stf21n65m5 STI21N65M5 stp21n65m5 stw21n65m5 21n65m5 d2pak to-220fp i2pak to-220 to-247 tape and reel tu b e tu b e tu b e tu b e www.st.com
contents stb/f/i/p/w21n65m5 2/22 doc id 15427 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
stb/f/i/p/w21n65m5 electrical ratings doc id 15427 rev 4 3/22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, i2pak, d2pak, to-247 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 17 17 (1) 1. limited only by maximu m temperature allowed. a i d drain current (continuous) at t c = 100 c 10.7 10.7 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 68 68 (1) a p tot total dissipation at t c = 25 c 125 30 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj dv/dt (3) 3. i sd 17 a, di/dt 400 a/s; v peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak i2pak to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 14.17c/w r thj-amb thermal resistance junction- ambient max 62.5 50 62.5 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb/f/i/p/w21n65m5 4/22 doc id 15427 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8.5 a 0.150 0.179 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1950 46 3 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss. equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -133-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss. equivalent capacitance energy related -44-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.5 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 8.5 a, v gs = 10 v (see figure 20 ) - 50 13 23 - nc nc nc
stb/f/i/p/w21n65m5 electrical characteristics doc id 15427 rev 4 5/22 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 11 a, r g = 4.7 ?, v gs = 10 v (see figure 21 ) (see figure 24 ) - 37 10 12 24 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 100 v (see figure 21 ) - 294 4 28 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 21 ) - 340 5 29 ns c a
electrical characteristics stb/f/i/p/w21n65m5 6/22 doc id 15427 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak, i2pak figure 3. thermal impedance for to-220, d 2 pa k , i 2pa k figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 1 s am05490v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 1 s 0.01 am05491v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 1 s 0.01 am05492v1
stb/f/i/p/w21n65m5 electrical characteristics doc id 15427 rev 4 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 25 5v 6v 7v v g s =10v 3 0 3 5 3 0 am0549 3 v1 i d 20 15 5 0 0 4 v g s (v) 8 (a) 2 6 10 25 3 0 v d s =15v 10 3 5 am05494v1 v g s 6 4 2 0 0 20 q g (nc) (v) 8 40 60 10 v dd =520v i d = 8 .5a 12 240 160 8 0 0 3 20 4 8 0 v d s v g s 400 am05496v1 r d s (on) 0.1 3 0.12 0.11 0.10 0 8 i d (a) ( ? ) 4 14 0.14 0.15 2 6 10 12 16 v g s = 10 v 0.16 0.17 am05495v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am05497v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 8 9 am0549 8 v1
electrical characteristics stb/f/i/p/w21n65m5 8/22 doc id 15427 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode. v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 i d =250 a am05500v1 r d s (on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1. 3 1.9 2.1 125 i d = 8 .5 a v g s = 10 v am05501v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c am05502v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d = 1 ma am05499v1 e 60 40 20 0 0 20 r g ( ? ) ( j) 10 3 0 8 0 100 120 40 i d =11a v dd =400v v g s =10v eon eoff 140 160 am05541v1
stb/f/i/p/w21n65m5 test circuits doc id 15427 rev 4 9/22 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefor m figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stb/f/i/p/w21n65m5 10/22 doc id 15427 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb/f/i/p/w21n65m5 package mechanical data doc id 15427 rev 4 11/22 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 figure 25. to-220fp drawing mechanical data 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stb/f/i/p/w21n65m5 12/22 doc id 15427 rev 4 figure 26. i2pak (to-262) drawing table 9. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
stb/f/i/p/w21n65m5 package mechanical data doc id 15427 rev 4 13/22 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data stb/f/i/p/w21n65m5 14/22 doc id 15427 rev 4 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
stb/f/i/p/w21n65m5 package mechanical data doc id 15427 rev 4 15/22 table 11. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
package mechanical data stb/f/i/p/w21n65m5 16/22 doc id 15427 rev 4 figure 28. to-247 drawing 0075 3 25_f
stb/f/i/p/w21n65m5 package mechanical data doc id 15427 rev 4 17/22 table 12. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb/f/i/p/w21n65m5 18/22 doc id 15427 rev 4 figure 29. d2pak (to-263) drawing 0079457_r
stb/f/i/p/w21n65m5 packaging mechanical data doc id 15427 rev 4 19/22 5 packaging mechanical data figure 30. d2pak footprint (a) table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a. all dimension ar e in millimeters 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
packaging mechanical data stb/f/i/p/w21n65m5 20/22 doc id 15427 rev 4 figure 31. tape figure 32. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb/f/i/p/w21n65m5 revision history doc id 15427 rev 4 21/22 6 revision history table 14. document revision history date revision changes 24-feb-2009 1 first release 27-feb-2009 2 corrected package information on first page. 11-nov-2009 3 document status promoted from preliminary data to datasheet. 11-may-2011 4 r ds(on) values have been updated (see table 4: on /off states and figure 11: static drain-source on resistance ).
stb/f/i/p/w21n65m5 22/22 doc id 15427 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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